> SCAPS 3.3.11 ELIS-UGent: Version scaps3311.exe, dated 08-10-2023, 09:43:54 Problem definition file
> last saved by SCAPS: 	28-12-2023 at 18:49:25
> 
> 
convergence

recalculate mesh :  0 (0: fixed mesh, 1: adaptive mesh)
Mott-Schottky analysis epsilon of sheet side :  0	(left side = -1; right side = +1)
Mott-Schottky analysis number of points :  3	(3 or 5 as of december 2008)
Mott-Schottky analysis polynomial order middle :  2	(1 or 2 as of december 2008)
Mott-Schottky analysis polynomial order edges:  1	(1 or 2 as of december 2008)
Mott-Schottky analysis epsilon of layer number : -1
Mott-Schottky analysis defect number :  0
Mott-Schottky analysis level number :  0
Mott-Schottky analysis eh type :  1
Mott-Schottky analysis constant epsilon :   10.00000000
Mott-Schottky analysis epsilon(x) mode for NW :  0
Mott-Schottky analysis smooth epsilon for NW :  0


back contact

flatband : 1 (1: flatband contact imposed; 0: fixed Phi_m value)
recalculate : 1 (1 = do or 0 = do not recalculate phi_m to set flatband in each batch step)
Sn :  1.000e+02 [m/s]
Sp :  1.000e+05 [m/s]
Tunneling to contact: 0 (0: no tunneling, 1: with tunneling)
Relative electron mass :  1.00e+00
Relative hole mass :  1.00e+00


layer

name : p-layer
d : 5.000e-06 [m]
composition grading :	  0.00000	  0.00000	  0.00000	  0.00000	  0.00000	  0.00000	  0.00000	 0	 1	[-]
v_th_n :	 1.000e+05	 1.000e+05	 1.000e+01	 1.000e+01	 1.000e+01	 1.000e+05	 1.000e+05	 0	 0	[m/s]
v_th_p :	 1.000e+05	 1.000e+05	 1.000e+01	 1.000e+01	 1.000e+01	 1.000e+05	 1.000e+05	 0	 0	[m/s]
eps :	    10.000000	    10.000000	    10.000000	    10.000000	    10.000000	    10.000000	    10.000000	 0	 0	[-]
chi :	  4.500000	  4.500000	  1.000000	  1.000000	  1.000000	  4.500000	  4.500000	 0	 0	[eV]
Eg :	  1.200000	  1.200000	  0.500000	  1.000000	  1.000000	  1.200000	  1.200000	 0	 0	[eV]
Nc :	 1.000000e+25	 1.000000e+25	 1.000000e+01	 1.000000e+01	 1.000000e+01	 1.000000e+25	 1.000000e+25	 0	 0	[/m^3]
Nv :	 1.000000e+25	 1.000000e+25	 1.000000e+01	 1.000000e+01	 1.000000e+01	 1.000000e+25	 1.000000e+25	 0	 0	[/m^3]
mu_n :	 5.000000e-03	 5.000000e-03	 1.000000e-03	 1.000000e+00	 1.000000e+00	 5.000000e-03	 5.000000e-03	 0	 0	[m^2/Vs]
mu_p :	 5.000000e-03	 5.000000e-03	 1.000000e-03	 1.000000e+00	 1.000000e+00	 5.000000e-03	 5.000000e-03	 0	 0	[m^2/Vs]
Tunneling in layer: 0 (0: no tunneling, 1: with tunneling)
Relative electron mass :	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 0	 0	[-]
Relative hole mass :	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 0	 0	[-]
K_rad :	 0.000000e+00	 0.000000e+00	 1.000000e+01	 1.000000e+01	 1.000000e+01	 0.000000e+00	 0.000000e+00	 0	 0	[m^3/s]
c_n_auger :	 0.000000e+00	 0.000000e+00	 1.000000e+01	 1.000000e+01	 1.000000e+01	 0.000000e+00	 0.000000e+00	 0	 0	[m^6/s]
c_p_auger :	 0.000000e+00	 0.000000e+00	 1.000000e+01	 1.000000e+01	 1.000000e+01	 0.000000e+00	 0.000000e+00	 0	 0	[m^6/s]
Na(uniform) :	 1.000000e+21	 1.000000e+21	 1.000000e+01	 1.000000e+01	 1.000000e+01	 1.000000e+21	 1.000000e+21	 0	 2	[/m^3]
Nd(uniform) :	 1.000000e+07	 1.000000e+07	 1.000000e+01	 1.000000e+01	 1.000000e+01	 1.000000e+07	 1.000000e+07	 0	 2	[/m^3]
absorption grading :	 1033.31	 1033.31	  250.00	  250.00	    0.00	    1.20	    1.20	 7	 0	[nm]
absorptionmodel pure A material (y=0) : coefficients A and B (line inserted for compatibility with SCAPS until 3.3.06)
A :      +Inf [/(m*sqrt(eV))] (line inserted for compatibility with SCAPS until 3.3.06)
B : 0.000e+00 [sqrt(eV)/m] (line inserted for compatibility with SCAPS until 3.3.06)
absorptionmodel pure A material (y=0) : from model
absorption model A, model : power law 1
absorption model A, value of parameter 1 :   1.000000e+05
absorption model A, value of parameter 2 :   1.000000e-12
absorption model A, value of parameter 3 :  -1.000000e+00
absorption model A, value of parameter 4 :   1.000000e+00
absorption model A, model : sub bandgap tail
absorption model A, value of parameter 1 :   2.000000e-02
absorption pure B material (y=1), model : coefficients A and B (line inserted for compatibility with SCAPS until 3.3.06)
pure B material (y=1), A : 1.000e+07 [/(m*sqrt(eV))] (line inserted for compatibility with SCAPS until 3.3.06)
pure B material (y=1), B : 0.000e+00 [sqrt(eV)/m] (line inserted for compatibility with SCAPS until 3.3.06)
absorption pure B material (y=1), model : from model
absorption model B, model : sqrt(hv-Eg) law (SCAPS traditional)
absorption model B, value of parameter 1 :   1.095445e+05
absorption model B, value of parameter 2 :   0.000000e+00

srhrecombination

type : neutral ( 1 level(s) )
energy distribution : single
Reference for defect energy :  0 ; 0 = above EV (SCAPS<2.7); 1 = above Ei; 2 = below EC
Ekar :  0.1000 [eV]
Nt(uniform) :	 1.000000e+20	 1.000000e+20	 1.000000e+20	 1.000000e+00	 1.000000e+00	 1.000000e+20	 1.000000e+20	 0	 2	[/m^3]
profile : homogenous
Lkar : 1.000e+00 [m]
Nleft : 1.000e+20 [/m^3]
Nright : 1.000e+20 [/m^3]
leveltype : neutral	
sigma_n : 1.000e-18	[m^2]
sigma_p : 1.000e-18	[m^2]
Et :   0.600	[eV]

interface properties

interfacename : 
Intraband tunneling : 0 (0: no tunneling, 1: with tunneling)
Relative electron mass :  1.00e+00
Relative hole mass :  1.00e+00


layer

name : n-layer
d : 5.000e-07 [m]
composition grading :	  0.00000	  0.00000	  0.00000	  0.00000	  0.00000	  0.00000	  0.00000	 0	 1	[-]
v_th_n :	 1.000e+05	 1.000e+05	 1.000e+01	 1.000e+01	 1.000e+01	 1.000e+05	 1.000e+05	 0	 0	[m/s]
v_th_p :	 1.000e+05	 1.000e+05	 1.000e+01	 1.000e+01	 1.000e+01	 1.000e+05	 1.000e+05	 0	 0	[m/s]
eps :	    10.000000	    10.000000	    10.000000	    10.000000	    10.000000	    10.000000	    10.000000	 0	 0	[-]
chi :	  4.500000	  4.500000	  1.000000	  1.000000	  1.000000	  4.500000	  4.500000	 0	 0	[eV]
Eg :	  1.200000	  1.200000	  0.500000	  1.000000	  1.000000	  1.200000	  1.200000	 0	 0	[eV]
Nc :	 1.000000e+25	 1.000000e+25	 1.000000e+01	 1.000000e+01	 1.000000e+01	 1.000000e+25	 1.000000e+25	 0	 0	[/m^3]
Nv :	 1.000000e+25	 1.000000e+25	 1.000000e+01	 1.000000e+01	 1.000000e+01	 1.000000e+25	 1.000000e+25	 0	 0	[/m^3]
mu_n :	 5.000000e-03	 5.000000e-03	 1.000000e-03	 1.000000e+00	 1.000000e+00	 5.000000e-03	 5.000000e-03	 0	 0	[m^2/Vs]
mu_p :	 5.000000e-03	 5.000000e-03	 1.000000e-03	 1.000000e+00	 1.000000e+00	 5.000000e-03	 5.000000e-03	 0	 0	[m^2/Vs]
Tunneling in layer: 0 (0: no tunneling, 1: with tunneling)
Relative electron mass :	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 0	 0	[-]
Relative hole mass :	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 1.000000e+00	 0	 0	[-]
K_rad :	 0.000000e+00	 0.000000e+00	 1.000000e+01	 1.000000e+01	 1.000000e+01	 0.000000e+00	 0.000000e+00	 0	 0	[m^3/s]
c_n_auger :	 0.000000e+00	 0.000000e+00	 1.000000e+01	 1.000000e+01	 1.000000e+01	 0.000000e+00	 0.000000e+00	 0	 0	[m^6/s]
c_p_auger :	 0.000000e+00	 0.000000e+00	 1.000000e+01	 1.000000e+01	 1.000000e+01	 0.000000e+00	 0.000000e+00	 0	 0	[m^6/s]
Na(uniform) :	 1.000000e+07	 1.000000e+07	 1.000000e+01	 1.000000e+01	 1.000000e+01	 1.000000e+07	 1.000000e+07	 0	 2	[/m^3]
Nd(uniform) :	 1.000000e+23	 1.000000e+23	 1.000000e+01	 1.000000e+01	 1.000000e+01	 1.000000e+23	 1.000000e+23	 0	 2	[/m^3]
absorption grading :	 1033.31	 1033.31	  250.00	  250.00	    0.00	    1.20	    1.20	 7	 0	[nm]
absorptionmodel pure A material (y=0) : coefficients A and B (line inserted for compatibility with SCAPS until 3.3.06)
A :      +Inf [/(m*sqrt(eV))] (line inserted for compatibility with SCAPS until 3.3.06)
B : 0.000e+00 [sqrt(eV)/m] (line inserted for compatibility with SCAPS until 3.3.06)
absorptionmodel pure A material (y=0) : from model
absorption model A, model : power law 1
absorption model A, value of parameter 1 :   1.000000e+05
absorption model A, value of parameter 2 :   1.000000e-12
absorption model A, value of parameter 3 :  -1.000000e+00
absorption model A, value of parameter 4 :   1.000000e+00
absorption model A, model : sub bandgap tail
absorption model A, value of parameter 1 :   2.000000e-02
absorption pure B material (y=1), model : coefficients A and B (line inserted for compatibility with SCAPS until 3.3.06)
pure B material (y=1), A : 1.000e+07 [/(m*sqrt(eV))] (line inserted for compatibility with SCAPS until 3.3.06)
pure B material (y=1), B : 0.000e+00 [sqrt(eV)/m] (line inserted for compatibility with SCAPS until 3.3.06)
absorption pure B material (y=1), model : from model
absorption model B, model : sqrt(hv-Eg) law (SCAPS traditional)
absorption model B, value of parameter 1 :   1.095445e+05
absorption model B, value of parameter 2 :   0.000000e+00

srhrecombination

type : neutral ( 1 level(s) )
energy distribution : single
Reference for defect energy :  0 ; 0 = above EV (SCAPS<2.7); 1 = above Ei; 2 = below EC
Ekar :  0.1000 [eV]
Nt(uniform) :	 1.000000e+20	 1.000000e+26	 1.000000e+20	 1.000000e+00	 1.000000e+00	 1.000000e+20	 1.000000e+20	 0	 2	[/m^3]
profile : homogenous
Lkar : 1.000e+00 [m]
Nleft : 1.000e+20 [/m^3]
Nright : 1.000e+20 [/m^3]
leveltype : neutral	
sigma_n : 1.000e-18	[m^2]
sigma_p : 1.000e-18	[m^2]
Et :   0.600	[eV]


front contact

flatband : 1 (1: flatband contact imposed; 0: fixed Phi_m value)
recalculate : 1 (1 = do or 0 = do not recalculate phi_m to set flatband in each batch step)
Sn : 1.000e+05 [m/s]
Sp : 1.000e-02 [m/s]
Tunneling to contact: 0 (0: no tunneling, 1: with tunneling)
Relative electron mass :  1.00e+00
Relative hole mass :  1.00e+00


working point

illuminated from : right
internal Rfront :   0.00000000
internal Tfront :  1.0000e+00
voltage V applied to : -1 (+1: right contact; -1: left contact)
cell reference system :  1 (1: as a consumer (consumed power = +VJ; 0: as a generator (generated power = +VJ) )